The piezoelectric twin wafer is composed of multi-layer co-fired piezoelectric ceramic layer, and the bias control of the upper half of the ceramic layer is not affected by the bias of the lower half of the ceramic layer. As the voltage applied to the ceramic layer increases, the length of the ceramic layer will also increase. When the extension of the upper and lower ceramic layers is different, the free end of the twin chip will be displaced. Multi-layer all-ceramic technology Sub-micron resolution Low voltage drive, big output Low power consumption, resistant to magnetic field interference Can be used in vacuum environment Size/voltage can be customized
The piezoelectric twin wafer is composed of multiple co-fired piezoelectric ceramic layers, and the bias control of the upper part of the ceramic layer is not affected by the bias of the lower part of the ceramic layer. As the voltage applied to the ceramic layer increases, the length of the ceramic layer will also increase. When the extension of the upper and lower ceramic layers is different, the free end of the twin chip will be displaced. The free end of the piezoelectric twin wafer can be bent to produce displacement, and the amplitude and direction of the displacement are functionally related to the applied bias. They can be used in applications such as lead bonding, electrical switching, beam deflection, valves and acceleration sensors. Piezoelectric twinning with three preassembled leads, optionally with no substrate or preassembled substrate.
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